Smarted trench gate technology design
Absolute Maximum Ratings @TC=25℃(per leg, for reference only)
Type | IC @TC= 80℃ A | VCES @VGE=0V | VGES V | ICM | IF (diode) | IFM (diode) A | tSC μs | VISO @AC 1min V | Tj ℃ | Tstg ℃ | Outline | |||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
V | IC mA |
A | @TC ℃ |
A | @TC ℃ | |||||||||
SIM75D12SV1 | 75 | 1200 | 0.5 | ±20 | 150 | 80 | 75 | 80 | 150 | 10 | 2750 | -40~ 150 | -40~ 150 | HV1 |
SIM100D12SV1 | 100 | 200 | 25 | 100 | 80 | 200 | 2500 | |||||||
140 | 25 | |||||||||||||
SIM150D12SV3 | 150 | 1280 | 1.0 | ±20 | 300 | 80 | 150 | 80 | 300 | 10 | 2500 | -40~ 150 | -40~ 150 | HV3 |
SIM200D12SV3 | 200 | 1200 | 400 | 25 | 200 | 80 | 400 | |||||||
260 | 25 |
Electrical Characteristics @Tj=25℃(for reference only)
Type | V(BR)CES @VGE=0V | VCE(ON) @VGE=15V | VGE(th) @VCE=VGE | ICES @VGE=0V VGE=1200V μA | IGES @VGE=0V VGE=±20V μA | VFM (diode) | Cies pF | td(on) ns | tr ns | trr (diode) ns | ||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
V | IC mA |
V | IC A |
V | IC μA |
V | IC A | |||||||
SIM75D12SV1 | 1400 | 0.2 | 1.7 | 75 | 6.0 | 500 | 300 | ±0.4 | 1.6 | 75 | 6000 | 100 | 40 | 160 |
SIM100D12SV1 | 1374 | 2.1 | 100 | 6.5 | 250 | 250 | ±0.1 | 2.1 | 100 | 8653 | 342 | 45 | 100 | |
SIM150D12SV3 | 1400 | 1.0 | 1.8 | 150 | 6.0 | 500 | 300 | ±0.5 | 1.4 | 150 | 9000 | 150 | 60 | 165 |
SIM200D12SV3 | 1200 | 2.15 | 200 | 6.5 | 500 | 1000 | ±0.2 | 2.15 | 200 | 17306 | 300 | 108 | 250 |
Document | Format | File Size |
SIM75D Outlines | 42.3 KB | |
SIM75D Spec Sheet | 269 KB |