Key Features

   Fine Mechanical Strength

   Fine Adhesion and Corrosion Resistent

   Excellent Electrical Insulation and Thermal Conductive Properties

   High Reliability

   Lower Thermal Expansion Coefficient

   Etchable to Various Graphs

Applications

   Power Semiconductor Modules         Power Hybrids

   Power Control Circuits        Solid-state Relays

   Semiconductor Refrigerators               Electronic Devices for Automobile

   Intelligent Power Assemblies              Solar Cell Board

Direct Copper Bonded (DCB) Ceramic Substrates

Technical Parameters		Unit	Value
Ceramic	Content	%	96 Al2O3	96 AlN
	Thickness	mm	0.25, 0.38, 0.5, 0.63 (std.), 0.76, 1.0
	Dielectric Constant (at 25℃,1MHz )		9.4	8.9
	Dielectric Loss Angle	×10-4	3	3
	Dielectric Strength	KV/mm	> 14	> 14
	Thermal Conductivity (at 25℃)	W/m.K	24 ~ 28	150
Copper Layer	Thickness	mm	0.3
	Thermal Conductivity	W/m.K	385
DCB	Dimension (max.)	mm × mm	127 × 198	75 × 57
	Thermal Expansion Coefficient	×10-6/℃	7.4 (25 ~ 200℃)	5 (50 ~ 500℃)
	Bounding Force	N/mm	> 6	> 3
	Bending	μm/mm	< 150/50
	Operating Temperature (inert atmosphere)	℃	-55 ~ +850
	Plating		Au or Ni plated or bared Cu
Note: Dimension and etching graph of DCB substrate can be produced according to customers' requirements.